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K7I163684B - 512Kx36 & 1Mx18 DDRII CIO b4 SRAM

K7I163684B_1354455.PDF Datasheet


Part No.	K7I163684B K7I161884B
Description	512Kx36 & 1Mx18 DDRII CIO b4 SRAM
File Size	417.62K / 18 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
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K7Q163652A K7Q161852A	512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7I321884C K7I323684C	1Mx36 & 2Mx18 DDRII CIO b4 SRAM	Samsung semiconductor
IS61QDPB251236A IS61QDPB251236A1 IS61QDPB251236A2	512Kx36 and 1Mx18 configuration available	Integrated Silicon Solu...
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